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Materials Page 
Terminology
Reference 4

SiO2 (Silicon Dioxide)

l (nm) n
300 1.52
400 1.49
550 1.46
1000 1.44

Bulk Properties

 
Quartz

Melting Point:
  1610
ºC
Density: 2.635 - 2.660 gm/cc
Young's Modulus:

11.1 x 107 psi - perpendicular to c axis
14.1x107 psi - parallel to c axis

Fused
Melting Point:
  1710
ºC
Density: 2.17 -2.20 gm/cc
Young's Modulus:

1.06 x 107 psi

Film Properties

Evap. Temp.:  1600 ºC
Film Growth:  Amorphous
Film Hardness:
  Hard

Common uses:  Multilayer coatings.  Insulating layer. Antireflection coatings.

Comments:  High deposition rates or low substrate temperature produce stresses, underdense films.

 

 


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Last modified: July 17, 2003